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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. A MJE13005D TRIPLE DIFFUSED NPN TRANSISTOR O C F E MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB ) PC Tj Tstg RATING 800 400 10 5 10 2 75 150 -55 150 Equivalent Circuit C G B UNIT I Q V V V K M L J D P A A N N H 1. BASE Collector Power Dissipation (Tc=25 Junction Temperature Storage Temperature Range W 2. COLLECTOR 3. EMITTER DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ J 13.08 + 0.3 K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q TO-220AB B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Emitter Cut-off Current DC Current Gain ) E SYMBOL IEBO hFE(1) hFE(2) VCE(sat) TEST CONDITION VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A IC=0.5A, IB=0.1A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=1MHz VCE=10V, IC=0.5A OUTPUT 300S IB1 IB2 I B2 150 INPUT I B1 MIN. 18 8 4 2 - TYP. 65 800 1.4 1.9 MAX. 10 35 0.5 0.6 1 1.6 0.15 5 0.8 1.6 - UNIT A Collector-Emitter Saturation Voltage V Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency Turn-On Time Storage Time Fall Time Diode Forward Voltage VBE(sat) Cob fT ton tstg tf VF trr V pF MHz S S S V nS S S IB1=0.4A, IB2=-1A DUTY CYCLE < 2% = VCC =300V IF=2A IF=0.4A IF=1A IF=2A *Reverse recovery tims (di/dt=10A/ S) *Pulse Test : Pulse Width = 5mS, Duty cycles 10% Note : hFE Classification R : 18~27, O : 23~35 2008. 7. 9 Revision No : 2 1/3 MJE13005D hFE - IC 100 VBE(sat),VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VBE(sat),VCE(sat) (V) VCE=1V 10 DC CURRENT GAIN hFE Ta=125 C -20 C IC/IB=10 25 C 1 VBE(sat) 10 VCE(sat) 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) hFE - IC COLLECTOR OUTPUT CAPACITANCE Cob (pF) 100 1k 500 300 100 50 30 10 5 3 1 1 3 10 VCE=5V Cob - VCB DC CURRENT GAIN hFE Ta=125 C 25 C -20 C COMMON EMITTER f=1MHz Ta=25 C 10 1 0.01 0.1 1 10 30 100 300 1k COLLECTOR CURRENT IC (A) COLLECTOR-BASE VOLTAGE VCB (V) IC - VCE COLLECTOR CURRENT IC (A) 5 4 3 IB=100mA SWITCHING CHARACTERISTIC 10 IB=500mA IB=400mA IB=300mA IB=200mA SWITCHING TIME (S) tstg 1 2 1 0 0 1 2 3 4 5 6 7 8 IB=50mA 0.1 VCC=300V IC=5IB1,=-2.5IB2 tf IB=0V 0.01 10 0.1 9 1 10 COLLECTOR EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) 2008. 7. 9 Revision No : 2 2/3 MJE13005D trr - IF 1.6 VF - IF FORWARD DIODE VOLTAGE VF (V) 10 REVERSE RECOVERY TIME trr (S) 1.4 1.2 1 1.0 0.8 1.0 1.5 2.0 0.1 0.01 0.1 1 10 FORWARD CURRENT IF (A) FORWARD DIODE CURRENT IF (A) SAFE OPERATING AREA COLLECTOR CURRENT IC (A) 100 COLLECTOR POWER DISSIPATION PC (W) PC - Ta 100 Tc=Ta INFINITE HEAT SINK 10 80 60 40 20 0 0 25 50 75 100 125 150 175 200 1s 10s 1ms 5ms DC 1 0.1 0.01 10 100 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C) 2008. 7. 9 Revision No : 2 3/3 |
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